Corner clipping for field effect devices
US7666741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2006 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | May 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is presented for fabricating a non-planar field effect device. The method includes the production of a Si based material Fin structure that has a top surface substantially in parallel with a {111} crystallographic plane of the Si Fin structure, and the etching of the Si Fin structure with a solution which contains ammonium hydroxide (NH4OH). In this manner, due to differing etch rates in ammonium hydroxide of various Si based material crystallographic planes, the corners on the Fin structure become clipped, and angles between the horizontal and vertical planes of the Fin structure increase. A FinFET device with clipped, or rounded, corners is then fabricated to completion. In a typical embodiment the FinFET device is selected to be a silicon-on-insulator (SOI) device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.