Method for correcting photomask pattern
US7669153B2 · kind B2 · utility
3Cited by
1References
13Claims
0Family size
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Key dates
| Filing date | Apr 30, 2007 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Jun 6, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for correcting a photomask pattern is provided. The correcting method performs a verification of a focus-exposure matrix (FEM) and an overlay variation on a layout area having contact holes or vias in a layout pattern so as to generate a hint information. The layout pattern of the photomask is corrected according to the hint information to prevent the contact holes or vias from being exposed in arrangement to corresponding metal layer, poly layer, or diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.