Semiconductor mask and method of making same
US7669173B2 · kind B2 · utility
3Cited by
5References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 7, 2006 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Apr 22, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/78
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of making a semiconductor device is disclosed. A target mask pattern is provided which includes features to be exposed on the mask, and features to be non-exposed on the mask. The to be exposed features are fractured by searching for geometries on the target mask pattern that meet one or more conditions, identifying mask pattern structures to be fractured, fracturing the identified pattern structures according to a fracture instruction list, creating a set of mask exposure patterns, exposing the mask to the mask exposure pattern, and developing the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.