Method for fabricating a cylindrical capacitor using amorphous carbon-based layer
US7670903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Oct 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A method for fabricating a cylindrical capacitor. The method includes forming an isolation structure including an interlayer on a substrate, the substrate having a plurality of contact plugs formed therein, forming a plurality of opening regions by etching the isolation structure, thereby exposing selected portions of the contact plugs, forming storage nodes on a surface of the opening regions, etching selected portions of the isolation structure to form a patterned interlayer that encompasses selected portions of the storage nodes, thereby supporting the storage nodes, removing remaining portions of the isolation structure, and removing the patterned interlayer to expose inner and outer walls of the storage nodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.