High-isolation switching device for millimeter-wave band control circuit
US7671697B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Apr 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/15
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.