Ho Kyun Ahn
33Patents
5h-index
40Co-inventors
69Inventor score
Filing activity: Mar 29, 2002 → Feb 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6593603B1 | Pseudomorphic high electron mobility transistor power device | Electricity | 17 | Expired |
| US7387955B2 | Field effect transistor and method for manufacturing the same | Electricity | 9 | Active |
| US7419862B2 | Method of fabricating pseudomorphic high electron mobility transistor | Electricity | 7 | Active |
| US7902572B2 | Field effect transistor and method for manufacturing the same | Electricity | 7 | Active |
| US7183149B2 | Method of manufacturing field effect transistor | Electricity | 5 | Expired |
| US8841154B2 | Method of manufacturing field effect type compound semiconductor device | Electricity | 5 | Active |
| US8722474B2 | Semiconductor device including stepped gate electrode and fabrication method thereof | Electricity | 5 | Active |
| US7889023B2 | Switching circuit for millimeter waveband control circuit | Electricity | 4 | Active |
| US8723222B2 | Nitride electronic device and method for manufacturing the same | Electricity | 4 | Active |
| US7671697B2 | High-isolation switching device for millimeter-wave band control circuit | Electricity | 4 | Active |
| US7429894B2 | Power device having connection structure compensating for reactance component of transmission line | Electricity | 3 | Active |
| US9012920B2 | Wafer level packaged GaN power semiconductor device and the manufacturing method thereof | Electricity | 2 | Active |
| US9438199B2 | Component package including matching circuit and matching method thereof | Electricity | 1 | Active |
| US9780176B2 | High reliability field effect power device and manufacturing method thereof | Electricity | 1 | Active |
| US10134854B2 | High electron mobility transistor and fabrication method thereof | Electricity | 1 | Active |
| US9537458B2 | Feedback amplifier | Electricity | 1 | Active |
| US9899226B2 | Semiconductor device and fabrication method thereof | Electricity | 1 | Active |
| US7973368B2 | Semiconductor device with T-gate electrode | Electricity | 0 | Active |
| US7893462B2 | Transistor of semiconductor device and method of fabricating the same | Electricity | 0 | Active |
| US12176306B2 | Electrical circuit of semiconductor channel resistor and apparatus and method for generating the same | Electricity | 0 | Active |
| US9209266B2 | High electron mobility transistor and manufacturing method thereof | Electricity | 0 | Active |
| US7518166B2 | Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate | Electricity | 0 | Expired |
| US8697507B2 | Transistor of semiconductor device and method of fabricating the same | Electricity | 0 | Active |
| US12166101B2 | High-electron-mobility transistor device and method of manufacturing the same | Electricity | 0 | Active |
| US9165896B2 | GaN transistor with improved bonding pad structure and method of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.