Patent · US Active

Producing thin integrated semiconductor devices

US7674654B2 · kind B2 · utility

5Cited by

3References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Brunnbauer · Lappersdorf, DE
Edward Fuergut · Nuremberg, DE
Werner Kroeninger · Regensburg, DE

Key dates

Filing date	Jun 1, 2007
Grant date	Mar 9, 2010
Priority date	—
Expiry date	Feb 13, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Thin integrated semiconductor devices are produced by being embedded in a molding compound matrix in such a way that a composite is formed. The semiconductor devices are first embedded in the matrix and then thinned after being embedded. The thin integrated semiconductor devices are singulated by forming separating cuts into the molding compound matrix between adjacent devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.