Method of manufacturing a semiconductor device
US7674668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2007 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Jan 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After a gate electrode is formed on a main surface of a semiconductor substrate, low concentration layers are formed on the main surface of the semiconductor substrate by implanting impurities therein, with using the gate electrode as a mask. Thereafter, first sidewalls and second sidewalls are formed on the both side surfaces of the gate electrode. Subsequently, nitrogen or the like is ion-implanted into the semiconductor substrate, with using the first sidewalls, the second sidewalls and the gate electrode as a mask, thereby forming a crystallization-control region (CCR) on the main surface of the semiconductor substrate. Then, after the second sidewalls are removed, high concentration layers for a source and a drain are formed on the main surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.