Gridded contacts in semiconductor devices

US7674703B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roberto Schiwon · Dresden, DE
• Klaus Herold · Poughquag, US
• Jenny Lian · Oshima, JP
• Sajan Marokkey · Wappingers Falls, US
• Martin Ostermayr · Straubing, DE

Key dates

• Filing date: Jan 27, 2009
• Grant date: Mar 9, 2010
• Expiry date: Jan 27, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Mask sets, layout design, and methods for forming contacts in devices are described. In one embodiment, a method of manufacturing a semiconductor device includes a exposing a first photo resist layer using a first light beam thereby forming first features. The first exposure is performed by the first light beam passing through a first dipole illuminator and then a first mask. A dipole axis of the first dipole illuminator is oriented in a first direction. After exposing the first photo resist layer, forming second features using a second exposure with a second light beam. The second exposure is performed by the second light beam passing through a second dipole illuminator and then a second mask. A dipole axis of the second dipole illuminator is oriented in a second direction. The first direction and the second direction are not perpendicular. The first and the second features comprise a pattern for forming contact holes.