Semiconductor device having a contact on a buffer layer thereof and method of forming the same
US7675090B2 · kind B2 · utility
6Cited by
73References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2007 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Apr 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of forming the same. The semiconductor device includes an epitaxially grown and conductive buffer layer having a contact covering a substantial portion of a bottom surface thereof and a lateral channel above the buffer layer. The semiconductor device also includes another contact above the lateral channel and an interconnect that connects the lateral channel to the buffer layer, operable to provide a low resistance coupling between the contact and the lateral channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.