Silicide strapping in imager transfer gate device

US7675097B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• EASTMAN KODAK COMPANY · US

Inventors

• James W. Adkisson · Jericho, US
• John J. Ellis-Monaghan · Grand Isle, US
• R. Michael Guidash · Rochester, US
• Mark D. Jaffe · Shelburne, US
• Edward T. Nelson · Penfield, US
• Richard J. Rassel · Tappahannock, US
• Charles V. Stancampiano · Rochester, US

Key dates

• Filing date: Dec 1, 2006
• Grant date: Mar 9, 2010
• Expiry date: Jan 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/18

Abstract

A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.