Patent · US Expired

Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component

US7675108B2 · kind B2 · utility

4Cited by

4References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Josef Lutz · Rohrau, AT
Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
Ralf Siemieniec · Villach, AT

Key dates

Filing date	Aug 11, 2005
Grant date	Mar 9, 2010
Priority date	—
Expiry date	Aug 11, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/157
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.