Compositions and methods for dielectric CMP
US7677956B2 · kind B2 · utility
1Cited by
29References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2002 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Jul 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.