Patent · US Active

Semiconductor device with gel-type thermal interface material

US7678615B2 · kind B2 · utility

9Cited by

9References

27Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Maxat Touzelbaev · San Jose, US
Raj N. Master · San Jose, US
Frank Kuechenmeister · Dresden, DE

Key dates

Filing date	Aug 29, 2007
Grant date	Mar 16, 2010
Priority date	—
Expiry date	Feb 28, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3511
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various methods and apparatus for establishing a thermal pathway for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes forming a metal layer on a semiconductor chip and forming a gel-type thermal interface material layer on the metal layer. A solvent and a catalyst material are applied to the metal layer prior to forming the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.