Nonvolatile memory device and method of manufacturing the same
US7678650B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2009 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | May 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
Example embodiments provide a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.