Method of forming low-temperature conformal dielectric films
US7678709B1 · kind B1 · utility
2Cited by
8References
19Claims
0Family size
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Key dates
| Filing date | Jul 24, 2007 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Nov 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.