Low wet etch rate silicon nitride film
US7678715B2 · kind B2 · utility
499Cited by
132References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2007 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | May 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.