Termination structure for a power semiconductor device
US7679111B2 · kind B2 · utility
6Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2006 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Jun 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A power semiconductor device having a termination structure that includes a polysilicon field plate, a metallic field plate, and a polysilicon equipotential ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.