Semiconductor chip with crack stop
US7679200B2 · kind B2 · utility
8Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2007 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | May 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various semiconductor chip crack stops and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor substrate that has a first corner defined by a first edge and a second edge. A crack stop is formed in the semiconductor substrate. The crack stop includes a first projection extending to the first edge and a second projection extending to the second edge to fence off a portion of the semiconductor substrate that includes the first corner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.