Method of forming integrated circuit having a magnetic tunnel junction device
US7682841B2 · kind B2 · utility
48Cited by
8References
48Claims
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Key dates
| Filing date | May 2, 2007 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Aug 6, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an integrated circuit having a magnetic tunnel junction device is disclosed. The method includes depositing a bottom pinning structure above the bottom conductive structure. A first ferromagnetic structure is deposited above the bottom pinning structure in a chamber. A tunnel barrier structure is deposited above the first ferromagnetic layer structure in the chamber, and a second ferromagnetic structure is deposited above the tunnel barrier structure of the magnetic tunnel junction device in another chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.