Use of Cl2 and/or HCl during silicon epitaxial film formation
US7682940B2 · kind B2 · utility
20Cited by
86References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2005 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Aug 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.