Nicholas C. Dalida
7Patents
6h-index
8Co-inventors
48Inventor score
Filing activity: May 14, 2004 → May 31, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7132338B2 | Methods to fabricate MOSFET devices using selective deposition process | Electricity | 107 | Expired |
| US7682940B2 | Use of Cl2 and/or HCl during silicon epitaxial film formation | Electricity | 20 | Active |
| US7737007B2 | Methods to fabricate MOSFET devices using a selective deposition process | Electricity | 9 | Active |
| US7960256B2 | Use of CL2 and/or HCL during silicon epitaxial film formation | Electricity | 8 | Active |
| US7439142B2 | Methods to fabricate MOSFET devices using a selective deposition process | Electricity | 7 | Active |
| US7732305B2 | Use of Cl2 and/or HCl during silicon epitaxial film formation | Electricity | 7 | Active |
| US8586456B2 | Use of CL2 and/or HCL during silicon epitaxial film formation | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.