Phase change alloy etch
US7682979B2 · kind B2 · utility
2Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2006 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Dec 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.