Dual doped polysilicon and silicon germanium etch
US7682985B2 · kind B2 · utility
5Cited by
20References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2004 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Jan 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a stack with at least one silicon germanium layer over a substrate in a processing chamber is provided. A silicon germanium etch is provided. An etchant gas is provided into the processing chamber, wherein the etchant gas comprises HBr, an inert diluent, and at least one of O2 and N2. The substrate is cooled to a temperature below 40° C. The etching gas is transformed to a plasma to etch the silicon germanium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.