Method and system for detecting hidden defects
US7683317B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 15, 2006 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Dec 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/057
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for detecting hidden defects and patterns, the method includes: receiving an object that comprises an opaque layer positioned above an intermediate layer; defining an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band. A scanning electron microscope that includes a stage for supporting an object that comprises an opaque layer positioned above an intermediate layer; a controller, adapted to receive or define an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illumination optics adapted to illuminate the object with a primary electron beam; an electron spectrometer, controlled by the controller such as to selectively reject electrons in response to the defined energy band; and a processor, coupled to the spectrometer, adapted to generate images from detection signals provided by the spectrometer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.