Silicon based photodetector
US7683374B2 · kind B2 · utility
3Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2005 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Apr 15, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A method of fabricating a photodetector device includes preparing a silicon substrate, forming a patterned mesa on the silicon substrate, and forming a patterned conductive layer over the patterned mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.