Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

US7687293B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Hiroshi Sato · Moriya, JP
• John F. Kaeding · Mountain View, US
• Michael Iza · Goleta, US
• Troy J. Baker · Raleigh, US
• Benjamin A. Haskell · Lompoc, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Jan 19, 2007
• Grant date: Mar 30, 2010
• Expiry date: Jan 19, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.