Trench MOSFET and method of manufacture utilizing four masks

US7687352B2 · kind B2 · utility

Assignee

• Inpower Semiconductor Co., Ltd. · CN

Inventors

• Shih-Tzung Su · New Taipei, TW
• Jun Zeng · Torrance, US
• Poi Sun · Torrance, US
• Kao-Way Tu · New Taipei, TW
• Tai Chiang Chen · Shanghai, CN
• Long Lv · Tianjin, CN
• Xin Wang · Tianjin, CN

Key dates

• Filing date: Oct 2, 2007
• Grant date: Mar 30, 2010
• Expiry date: Feb 27, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

In accordance with the invention, a trench MOSFET semiconductor device is manufactured in accordance with a process comprising the steps of: providing a heavily doped N+ silicon substrate; utilizing a first mask to define openings for the trench gate and termination; utilizing a second mask as a source mask with openings determining the size and shape of a diffused source junction depth; utilizing a third mask as a contact mask to define contact hole openings; and utilizing a fourth mask as a metal mask, whereby only the first, second, third and fourth masks are utilized in the manufacture of the trench MOSFET semiconductor device.