Methods of depositing electrically active doped crystalline Si-containing films
US7687383B2 · kind B2 · utility
8Cited by
71References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 30, 2006 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Feb 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.