Method of forming a semiconductor structure having metal migration semiconductor barrier layers

US7687386B2 · kind B2 · utility

Assignee

• The Boeing Company · US

Inventors

• Hojun Yoon · Humphreys, US
• Richard R. King · Thousand Oaks, US
• Jerry R. Kukulka · Santa Clarita, US
• James H. Ermer · Burbank, US
• Maggy Lau · Mentryville, US

Key dates

• Filing date: Feb 20, 2007
• Grant date: Mar 30, 2010
• Expiry date: Feb 20, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.