Profile adjustment in plasma ion implanter
US7687787B2 · kind B2 · utility
3Cited by
11References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2008 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Nov 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.