Bit line structure and method for the production thereof

US7687842B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ronald Kakoschke · Birkenfeld, DE
• Franz Schuler · Kreßbronn, DE
• Georg Tempel · Zorneding, DE

Key dates

• Filing date: Nov 14, 2005
• Grant date: Mar 30, 2010
• Expiry date: Aug 27, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

A bit line structure and associated fabrication method are provided for a semiconductor element or circuit arrangement. The bit line structure contains a surface bit line and a buried bit line. The buried bit line is formed in an upper section of a trench and is connected to an associated first doping region via a first connection layer. A first trench filling layer, which is insulated from the buried bit line by a second trench insulating layer, is situated in a lower section of the trench.