Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme

US7687867B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Ebenezer E. Eshun · South Burlington, US
• Zhong-Xiang He · South Burlington, US
• William J. Murphy · North Ferrisburgh, US
• Vidhya Ramachandran · Cupertino, US

Key dates

• Filing date: Aug 28, 2007
• Grant date: Mar 30, 2010
• Expiry date: Mar 17, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by deposition and patterning of the MIM capacitor films. Specifically, the method includes providing a substrate including a wiring level, the wiring level comprising at least one conductive interconnect formed in a dielectric layer; selectively removing a portion of the dielectric layer to recess the dielectric layer below an upper surface of the at least one conductive interconnect; forming a dielectric stack upon the at least one conductive interconnect and the recessed dielectric layer; and forming a metal-insulator-metal (MIM) capacitor on the dielectric stack. The MIM capacitor includes a bottom plate electrode, a dielectric and a top plate electrode. The bottom and top plate electrodes can comprise the same or different conductive metal.