Back-lit image sensor with a uniform substrate temperature

US7687872B2 · kind B2 · utility

Assignees

• STMicroelectronics (Crolles 2) SAS · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Yvon Cazaux · Grenoble, FR
• Philippe Coronel · Barraux, FR
• Claire Fenouillet-Beranger · Grenoble, FR
• Francois Roy · Seyssinet-Pariset, FR

Key dates

• Filing date: Jul 20, 2007
• Grant date: Mar 30, 2010
• Expiry date: Dec 29, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

An image sensor including photosensitive cells including photodiodes and at least one additional circuit with a significant heat dissipation including transistors. The image sensor is made in monolithic form and includes a layer of a semiconductor material having first and second opposite surfaces and including, on the first surface side, first regions corresponding to the power terminals of the transistors, the lighting of the image sensor being intended to be performed on the second surface side; a stack of insulating layers covering the first surface; a thermally conductive reinforcement covering the stack on the side opposite to the layer; and thermally conductive vias connecting the layer to the reinforcement.