Electron temperature measurement method, electron temperature measurement program for implementing the method, and storage medium storing the electron temperature measurement program
US7691226B2 · kind B2 · utility
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Key dates
| Filing date | Mar 24, 2006 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Dec 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron temperature measurement method that enables an electron temperature as a plasma parameter to be measured precisely.A plasma is produced in a chamber 11 such that a wafer W is subjected to reactive ion etching therein. An ion energy distribution in the chamber 11 is measured. An ion energy distribution in the chamber 11 is simulated based on a set electron temperature. The measured ion energy distribution and the simulated ion energy distribution are compared. The electron temperature of the plasma is estimated based on results of the comparison mentioned above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.