Method for improved growth of semipolar (Al,In,Ga,B)N
US7691658B2 · kind B2 · utility
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20References
26Claims
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Key dates
| Filing date | Jan 19, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Apr 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.