Integrated circuit with capacitor and method for the production thereof

US7692266B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Goebel · Wolfsberg, AT
• Johann Helneder · Landsham, DE
• Heinrich Körner · Bogen, DE
• Andrea Mitchell · Munich, DE
• Markus Schwerd · Holzkirchen, DE
• Martin Seck · Birkenfeld, DE
• Holger Torwesten · Neubiberg, DE

Key dates

• Filing date: Mar 3, 2006
• Grant date: Apr 6, 2010
• Expiry date: Jul 11, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/85
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.