Martin Seck
14Patents
4h-index
20Co-inventors
52Inventor score
Filing activity: Oct 24, 2003 → Jan 29, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7619309B2 | Integrated connection arrangements | Electricity | 46 | Expired |
| US7371650B2 | Method for producing a transistor structure | Electricity | 7 | Expired |
| US7667256B2 | Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and a method for producing the integrated circuit arrangement | Electricity | 6 | Active |
| US8367514B2 | Integrated circuit with capacitor and method for the production thereof | Electricity | 4 | Active |
| US8003475B2 | Method for fabricating a transistor structure | Electricity | 3 | Active |
| US7038255B2 | Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method | Electricity | 2 | Expired |
| US7692266B2 | Integrated circuit with capacitor and method for the production thereof | Electricity | 2 | Active |
| US7964494B2 | Integrated connection arrangements | Electricity | 2 | Active |
| US7656037B2 | Integrated circuit with improved component interconnections | Electricity | 2 | Active |
| US7968416B2 | Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method | Electricity | 2 | Active |
| US7592648B2 | Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method | Electricity | 2 | Active |
| US8258628B2 | System and method for integrated circuit arrangement having a plurality of conductive structure levels | Electricity | 1 | Active |
| US7060583B2 | Method for manufacturing a bipolar transistor having a polysilicon emitter | Electricity | 0 | Expired |
| US7091100B2 | Polysilicon bipolar transistor and method of manufacturing it | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.