Patent · US Active

Multi-bit resistive memory

US7692949B2 · kind B2 · utility

9Cited by
16References
38Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 4, 2006
Grant dateApr 6, 2010
Priority date
Expiry dateJan 4, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49002
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory includes a first multi-bit resistive memory cell and a single bit resistive memory cell. The single bit resistive memory cell is for storing a bit indicating whether data stored in the first multi-bit resistive memory cell is inverted.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.