Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes
US7695984B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2006 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Jun 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Method and system for detecting endpoint for a plasma etch process are provided. In accordance with one embodiment, the method provides a semiconductor substrate having a film to be processed thereon. The film is processed in a plasma environment during a time period to provide for device structures. Information associated with the plasma process is collected. The information is characterized by a first signal intensity. Information on a change in the first signal intensity is extracted. The change in the first signal intensity has a second signal intensity. The change in signal intensity at the second signal intensity is associated to an endpoint of processing the film in the plasma environment. The second signal intensity may be about 0.25% and less of the first signal intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.