Film formation method and apparatus for semiconductor process
US7696106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2008 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Jul 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.