Patent · US Active

Semiconductor component comprising a temporary field stopping area, and method for the production thereof

US7696605B2 · kind B2 · utility

2Cited by

5References

31Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Josef Lutz · Rohrau, AT

Key dates

Filing date	Jan 24, 2005
Grant date	Apr 13, 2010
Priority date	—
Expiry date	Sep 2, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/53
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a semiconductor component comprising a buried temporarily n-doped area (9), which is effective only in the event of turn-off from the conducting to the blocking state of the semiconductor component and prevents chopping of the tail current in order thus to improve the turn-off softness. Said temporarily effective area is created by implantation of K centers (10).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.