Ta sputtering target and method for preparation thereof
US7699948B2 · kind B2 · utility
9Cited by
11References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 29, 2003 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | May 27, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A manufacturing method of a Ta sputtering target in which a Ta ingot or billet formed by melting and casting is subject to forging, annealing, rolling processing and the like to prepare a sputtering target, wherein the ingot or billet is forged and thereafter subject to recrystallization annealing at a temperature of 1373K to 1673K. As a result of improving and devising the forging process and heat treatment process, the crystal grain diameter can be made fine and uniform, and a method of stably manufacturing a Ta sputtering target superior in characteristics can be obtained thereby.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.