Zinc oxide-based transparent conductor and sputtering target for forming the transparent conductor
US7699965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Mar 15, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Proposed is a zinc oxide-based transparent conductor characterized in having zinc oxide as its primary component, containing an element at 1 to 10 atomic % which has a smaller ion radius than zinc in the zinc oxide and serves as an n-type dopant for the zinc oxide, and containing nitrogen in which the atomicity ratio of nitrogen in relation to the n-type dopant (nitrogen/n-type dopant) is 0.3 to 0.6. In the development of a transparent conductor that does not contain In, which is an expensive raw material with concern of resource depletion, the limit of the conventional development technique known as the single-dopant method is exceeded, a guide to dopant selection as a specific means for realizing the co-doping theory is indicated, and a transparent conductor having low resistivity is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.