Method for manufacturing a semiconductor device having polysilicon plugs
US7700431B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Jun 16, 2005 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | May 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a DRAM device on a silicon substrate includes: forming cell transistors in a memory cell area and other transistors in a peripheral circuit area; forming polysilicon plugs connected to diffused regions of the cell transistors and metallic plugs connected to diffused regions of the other transistors; heat treating at a temperature of 980 to 1,020 degrees C.; heat treating at a temperature of 700 to 850 degrees C.; implanting fluorine or boron fluoride into the diffused regions of the other transistors; and heat treating at a temperature of 500 to 850 degrees C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.