Structure and fabrication of field-effect transistor for alleviating short-channel effects
US7700980B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Dec 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Each of a pair of like-polarity IGFETs (40 or 42 and 240 or 242) has a channel zone (64 or 84) situated in body material (50). Short-channel effects are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 μm deep into the body material but not more than 0.4 μm deep into the body material. A pocket portion (100/102 or 104) extends along both source drain zones of one of the IGFETs. A pocket portion (244 or 246) extends largely along only one of the source/drain zones of the other IGFET so that it is an asymmetrical device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.