Metal-insulator-metal capacitor
US7700988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2006 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | May 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-insulator-metal (MIM) capacitor having a top electrode, a bottom electrode and a capacitor dielectric layer is provided. The top electrode is located over the bottom electrode and the capacitor dielectric layer is disposed between the top and the bottom electrode. The capacitor dielectric layer comprises several titanium oxide (TiO2) layers and at least one tetragonal structure material layer. The tetragonal structure material layer is disposed between two titanium oxide layers and each tetragonal structure material layer has the same or a different thickness. Leakage path can be cut off through the tetragonal material layer between the titanium oxide layers. In the meantime, the tetragonal structure material layer can induce the titanium oxide layers to transform into a high k rutile phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.