Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics
US7701005B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Oct 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Each of a pair of differently configured like-polarity insulated-gate field-effect transistors (40 or 42 and 240 or 242) in a semiconductor structure has a channel zone of semiconductor body material, a gate dielectric layer overlying the channel zone, and a gate electrode overlying the gate dielectric layer. For each transistor, the net dopant concentration of the body material reaches multiple local subsurface maxima below a channel surface depletion region and below largely all gate-electrode material overlying the channel zone. The transistors have source/drain zones (60 or 80) of opposite conductivity type to, and halo pocket portions of the same conductivity type as, the body material. One pocket portion (100/102 or 104) extends along both source/drain zones of one of the transistors. Another pocket portion (244 or 246) extends largely along only one of the source/drain zones of the other transistor so that it is asymmetrical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.