Phase change device having two or more substantial amorphous regions in high resistance state
US7701750B2 · kind B2 · utility
14Cited by
195References
26Claims
0Family size
Assignee
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Key dates
| Filing date | May 8, 2008 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Oct 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Memory devices are described herein along with method for operating the memory device. A memory cell as described herein includes a first electrode and a second electrode. The memory cell also comprises phase change material having first and second active regions arranged in series along an inter-electrode current path between the first and second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.