Three-dimensional mask model for photolithography simulation
US7703069B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Mar 12, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.